Semiconductor reaction chamber with plasma capabilities

ABSTRACT

A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Application is a continuation of and claims priority to U.S. patentapplication Ser. No. 13/948,055 entitled “SEMICONDUCTOR REACTION CHAMBERWITH PLASMA CAPABILITIES,” filed Jul. 22, 2013, the disclosure of whichis hereby incorporated herein by reference.

FIELD OF THE DISCLOSURE

This disclosure relates generally to semiconductor processing, and moreparticularly to an apparatus and method for providing an excited speciesof a processing gas to a substrate or wafer in a reaction chamber.

BACKGROUND

Semiconductor fabrication processes are typically conducted with thesubstrates supported within a chamber under controlled conditions. Formany purposes, semiconductor substrates (e.g., wafers) are heated insidethe process chamber. For example, substrates can be heated by directphysical contact with an internally heated wafer holder or “chuck.”“Susceptors” are wafer supports used in systems where the wafer andsusceptors absorb heat.

Some of the important controlled conditions for processing include, butare not limited to, pressure of the chamber, fluid flow rate into thechamber, temperature of the reaction chamber, temperature of the fluidflowing into the reaction chamber, and wafer position on the susceptorduring wafer loading.

Heating within the reaction chamber can occur in a number of ways,including lamp banks or arrays positioned above the substrate surfacefor directly heating the susceptor or susceptor heaters/pedestal heaterspositioned below the susceptor. Traditionally, the pedestal style heaterextends into the chamber through a bottom wall and the susceptor ismounted on a top surface of the heater. The heater may include aresistive heating element enclosed within the heater to provideconductive heat and increase the susceptor temperature.

Consistent processing and consistent results generally require carefulcontrol and metering of processing gases in the system. One of the lastresorts for controlling the processing gas is at the showerhead wherethe processing gas then contacts the wafer in the reaction chamber.Further, obtaining optimal flow rates and uniformity may be difficult attimes due to showerhead holes becoming clogged or parasitic precursorreactions occurring within the showerhead.

Plasma based reactors may use direct plasma integral to the reactor orremote plasma positioned upstream of the reactor. Direct plasma cancreate a more intense and effective plasma but may also damage thesubstrate. Conversely, remote plasma reduces the risk of damage to thesubstrate but may suffer from the excited species being less active andtherefore not properly reacting with a film on the substrate.

SUMMARY

Various aspects and implementations are disclosed herein that relate toa reaction chamber with plasma capabilities for processing a wafer. Inone aspect, a processing chamber includes a reaction chamber having aprocessing area, a processing gas inlet in communication with theprocessing area, a first excited species generation zone incommunication with the processing gas inlet and a second exited speciesgeneration zone in communication with the processing gas inlet.

In one implementation, the first and second excited species generationzones may be in communication with each other. The first and secondexcited species generation zones may be selectively in communicationwith each other. A valve may be positioned between the first excitedspecies generation zone and the processing gas inlet. A valve may bepositioned between the second excited species generation zone and theprocessing gas inlet. The first and second excited species generationzones may be non-co-axial.

The first and second excited species generation zones may be co-axiallyaligned. The first and second excited species generation zones maygenerate combustibly incompatible excited precursors. The first excitedspecies generation zone may excite a fluorine-based chemistry and thesecond excited species generation zone may excite a chlorine-basedchemistry. The first and second excited species generation zones mayeach further include an inductively coupled plasma generator. The firstand second excited species generation zones inductively coupled plasmagenerators are each separately controlled. The first and second excitedspecies generation zones may each further include a capacitively coupledplasma generator. The first and second excited species generation zonescapacitively coupled plasma generators are each separately controlled.

The processing chamber may further include an inert gas flow positionedbetween the first and second excited species generation zones. The firstand second excited species generation zones may be separated by inertgas valves. The first and second excited species generation zones may beat least partially composed of alumina or quartz. The first and secondexcited species generation zones may be energized with a single coil.

In another aspect, a method of processing a substrate may include thesteps of loading a substrate within a processing area, activating afirst excited species generation zone to provide a first excited speciesprecursor to the processing area during a first pulse and, activating asecond excited species generation zone to provide a second excitedspecies precursor different from the first excited species precursor tothe processing area during a second pulse.

In an implementation, the first and second excited species generationzones are different generation zones.

In another aspect, the method of delivering a plurality of precursors toa processing area may include the steps of providing a first and secondexcited species generation zones in communication with the processingarea, selectively flowing a first precursor through the first excitedspecies generation zone while exciting the first excited speciesgeneration zone, and selectively flowing a second precursor through thesecond excited species generation zone while exciting the second speciesgeneration zone.

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used to limit the scope of the claimed subject matter. Furthermore,the claimed subject matter is not limited to implementations that solveany or all disadvantages noted in any part of this disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic sectional view of a reaction chamber withdual plasma generation regions.

FIG. 2 illustrates a schematic sectional view of the dual plasmageneration regions.

FIG. 3 illustrates a schematic sectional view of the dual plasmageneration regions.

FIG. 4 illustrates a schematic sectional view of the dual plasmageneration regions

FIG. 5 illustrates a schematic sectional view of a second aspect dualplasma generation regions.

FIG. 6 illustrates a top schematic sectional view of the second aspectdual plasma generation regions taken generally about line 6-6 in FIG. 5.

FIG. 7 illustrates a schematic sectional view of the second aspect dualplasma generation regions.

FIG. 8 illustrates a schematic sectional view of the second aspect dualplasma generation regions.

FIG. 9 illustrates a schematic sectional view of a third aspect dualplasma generation regions.

FIG. 10 illustrates a top schematic sectional view of a third aspectdual plasma generation regions.

FIG. 11 illustrates an enlarged schematic sectional view of a fourthaspect dual plasma generation regions.

DETAILED DESCRIPTION

The present aspects and implementations may be described in terms offunctional block components and various processing steps. Suchfunctional blocks may be realized by any number of hardware or softwarecomponents configured to perform the specified functions and achieve thevarious results. For example, the present aspects may employ varioussensors, detectors, flow control devices, heaters, and the like, whichmay carry out a variety of functions. In addition, the present aspectsand implementations may be practiced in conjunction with any number ofprocessing methods, and the apparatus and systems described may employany number of processing methods, and the apparatus and systemsdescribed are merely examples of applications of the invention.

FIG. 1 illustrates a processing chamber 18 with a reaction chamber 20having an upper chamber 22 and a lower chamber 24. Upper chamber 22includes a showerhead 26, while lower chamber 24 generally includes asusceptor assembly 28 as may be commonly known in the art to receivewafer 30 for loading, unloading, and processing. While the presentdisclosure illustrates and describes a showerhead 26 in a split chamberwith upper and lower sections, it is within the spirit and scope of thepresent disclosure to incorporate showerhead 26 in a non-split chamberreactor or a cross-flow reactor without a showerhead. As is alsocommonly known, showerhead 26 is fed with an inlet manifold 32 (ormanifold port injectors or other suitable injecting means in across-flow reactor) so that gas flow within the reactor is representedby arrows 33.

Inlet manifold 32 may include a valve 34 which is commonly known inprecursor delivery systems and may be a standard pneumatic valve, amechanical valve, an inert gas valve, or any other suitable valvemechanism. Upstream of valve 34 may be a separation pipe 36 in someimplementations with additional valves 38 and 40 similar to valve 34which function to selectively isolate the various precursor inlets fromeach other. While not specifically shown, additional purge or vacuumports and/or lines may be oriented downstream of valves 38 and 40 toassist with purging the separation pipe 36 and inlet manifold 32. Valves34, 38, and 40 may be separately controlled with a controller 42 viacontrol lines 44, 46, and 48 respectively or any other suitablecontrolling system.

Precursor A 50 passes through an outlet pipe 52 upstream of valve 38,while Precursor B 54 passes through outlet pipe 56 upstream of valve 40.Precursor A 50 passes through a first excited species generation zone 58while Precursor B 54 passes through a second excited species generationzone 60. As can be seen proper valves may be used to isolate the firstand second excited species generation zones 58 and 60 so that a reactionbetween the precursors flowing through each of the respective excitedspecies generation zones can be prevented.

Each of first and second excited species generation zones 58 and 60 mayinclude a Faraday shield 62 on an outer periphery of each zone. Firstexcited species generation zone 58 may include control lines 64 and 66,while second excited species generation zone 60 may include controllines 68 and 70 The various control lines 64, 66, 68, and 70 connect toan excited species generation controller 72 as will be described ingreater detail below.

FIG. 2 illustrates sectional views of first and second excited speciesgeneration zones 58, 60. Both first and second excited speciesgeneration zones 58 and 60 include the faraday shield 62, a safetysheath 74, an electrical coil 76, and a generation zone tubing 78. Acooling region 80 is formed between safety sheath 74 and generation zonetubing 78 to provide a cooled inert gas flow to contact and maintain aproper operating temperature of the electrical coil 76 position therein.Generation zone tubing 78 includes an opening 82 therein for receivingPrecursor A 50 or Precursor B depending on which excited speciesgeneration zone the tubing is positioned in. Advantageously, opening 82is in fluid communication with appropriate precursor bottles to supplythe processing gas and outlet pipe 52 or 56 before passing though gatevalves 38 or 40 and ultimately gate valve 34 before reaching the reactorchamber. Generation zone tubing 78 may be composed of any suitablematerial for the precursors that will be utilized within opening 82. Forexample, when precursors that incorporate fluorine, oxygen, or hydrogenare utilized the generation zone tubing may be alumina, while when theprecursors that incorporate chlorine, oxygen, or silicon chloride areutilized the generation zone tubing may be quartz. The key is that theetch or deposition chemistries are compatible with the generation zonetubing material without unwanted reactions or particle generation.Electrical coil 76 is connected to control lines 64, 66 or 68, 70 (asappropriate) to provide electrical current at the excited speciesgeneration zones to form a magnetic field and form an excited specieswithin the appropriate opening 82 for Precursor A 50 or Precursor B 54.

Referring now to controller 72, a powering and matching circuit 84 areshown within controller 72 while a switching circuit 86 may also beincorporated within controller 72 and operated by a processing chambercontroller (not shown) in accordance with an appropriate processingrecipe or program. Power and matching circuit 84 is designed to providethe proper impedance and power to electrical coils 76 to generate anadequate enough excited species within the appropriate generation zonetubing 78 that the excited species can be moved with an inert gasthrough the gate valves, the showerhead, and finally the wafer surface.It is also further conceived that each of the first and second exitedspecies generation zones may need different or variable power in whichcase controller 72 may be regulated to provide this variable current asneeded and the power circuit may utilize RF or any other suitablemechanism for power. Referring back to valves 34, 38, and 40, actuators88 are positioned in each valve and are electrically or pneumaticallycontrolled to open or close depending on the process step beingperformed. One of skill in the art will immediately appreciate that anysuitable mechanism may be incorporated to prevent/permit gas flowthrough the valves, including actuators 88 or any other device or methodknown in the art. Preferably, the valves will be capable of high radicalconductance to limit and/or prevent the loss of excited species.

FIG. 3 illustrates Precursor A 50 being directed through generation zonetubing 78 as indicated by arrows 90, while FIG. 4 illustrates PrecursorB 54 being directed through generation zone tubing 78 as indicated byarrows 92. In FIG. 3, when Precursor A 50 is necessary for waferprocessing, gate valve 40 remains in the closed position while gatevalve 38 and gate valve 34 open in the directions associated with arrows94 after an appropriate amount of energy has been transferred to theprecursor through coil 76. Similarly, when Precursor B 54 is necessaryfor wafer processing, gate valve 38 remains in the closed position whilegate valve 40 and gate valve 34 open in the direction associated witharrows 94 after an appropriate amount of energy has been transferred tothe precursor through coil 76.

In operation, the processes shown in FIGS. 3 and 4 are performedseparately so that the precursors, whether excited or not, do not meet.In some instances if the precursors were to mix severe damage wouldresult. Further, the excited species generation zones may be separatedfrom one another so that even though both excited species generationzones are being provided with activated species, only one of theactivated species, or neither during a chamber purging step, reach thereaction chamber. In another implementation, the switching circuit 86may be used to selectively activate only one appropriate excited speciesgeneration zone at a time to reduce power consumption. Finally, as canbe seen in FIG. 4, the first and second excited species generation zonesmay be offset from one another and non-coaxial in one implementation.

FIGS. 5 through 8 illustrate a second embodiment of first and secondexcited species generation regions 96 within a single faraday shield 62.In this second implementation, Precursor A 50 and Precursor B 54 arepositioned co-axial with each other and share the same excited speciesgeneration source or electrical coil 76 and safety sheath 74. Again,similar to the previous implementation, cooling inert gas may flow overelectrical coil 76 through cooling region 80. The second implementation96 may also directly incorporate inert gas flow 98 through both thefirst and second excited species generation zones to direct therespective excited species precursor to the reaction chamber.

In the disclosed second implementation 96, Precursor B 54 is flowingthrough an outer region 100 formed by region walls 102 and 104 which maybe formed in the shape of a cylinder formed from a material which iscomplimentary and compatible with the precursor (alumina or quartz byway of non-limiting example).A gap 106 may be positioned radially inwardof region wall 104 while region wall 108 forms a central opening 110.Region wall 108 is also preferably formed from a material which iscomplimentary and compatible with the precursor used therein and may be,by way of non-limiting example, alumina or quartz.

FIG. 7 illustrates Precursor A 50 being activated and moving throughcentral opening 110 as indicated by arrows 112. Precursor A 50 may bemoved through the first excited species generation zone with inert gas98 and may leave the first excited species generation zone because agate valve is opened to permit communication between the central opening110 and reaction chamber 20. Arrows 114 indicate the flow path ofPrecursor B 54 and a gate valve blocking the flow so that Precursor B 54within the second exited species generation zone cannot leave outerregion 100. Thus, a selectively excited precursor can be provided to thereaction chamber on a selective basis with non-compatible precursors.

FIG. 8 illustrates Precursor B 54 being activated and moving throughouter region 100 as indicated by arrows 116. Precursor B 54 may be movedthrough the second excited species generation zone with inert gas 98 andmay leave the second excited species generation zone because a gatevalve is opened to permit communication between the outer region 100 andreaction chamber 20. Arrows 118 indicate the flow path of Precursor A 50and a gate valve blocking the flow so that Precursor A 50 within thefirst excited species generation zone cannot leave central opening 110.In operation, Precursor A 50 will be provided to the reaction chamber 20without Precursor B 54 and then Precursor B 54 will be provided to thereaction chamber 20 without Precursor A 50 in a cyclical process duringan etching or deposition process. In this manner, incompatibleprecursors may be utilized within the reaction chamber without damage ordanger.

FIGS. 9 and 10 illustrate views of a third implementation excitedspecies generation zone 120 with a capacitively coupled plasma generatorinstead of an inductively coupled plasma generator as shown anddescribed above. Once again, region walls 102 and 104 may be cylindricalin shape and define an outer region 100 where Precursor A 50 may beexcited and then selectively provided to reaction chamber 20. The plasmagenerator may include an inner electrode 122 and an outer electrode 124which are connected to control lines 64 and 66 respectively. Inoperation, the capacitively coupled plasma inner electrode 122 and outerelectrode 124 are activated by controller 72 and may selectively excitePrecursor A 50 before flowing the precursor into the reaction chamber 20for a deposition or etching process. Functionally, the thirdimplementation excited species generation zone 120 is similar to thepreviously described embodiments with the exception of incorporating acapacitively coupled generator instead of an inductively coupledgenerator. Further, the third implementation excited species generationzone 120 may utilize non-coaxially arranged generation zones similar tothe first aspect and a second excited species generation zone 120 may bepositioned in selective communication with the reaction chamber in asimilar manner to those previously described without departing from thespirit and scope of the present disclosure.

FIG. 11 illustrates a fourth implementation of an excited speciesgeneration zone 126 with faraday shield 62 and safety sheath 74. Similarto previous capacitively coupled plasma generators, inner electrode 122and outer electrode 124 are positioned inside and outside, respectively,of the precursor regions. An outer region 128 is formed by a first wall130 and a second wall 132 with a precursor flowing between the twowalls. An inner region 134 is formed by a third wall 136 and a four wall138. Walls 130, 132, 136, and 138 may be formed of any suitable material(alumina, quartz, etc.) depending on the precursor in contact with thoseparticular walls. In operation, a single capacitively coupled plasmagenerator can excite precursor in both inner region 134 and outer region128 and the flow of those excited species is controlled by gate valves.Alternatively, separate capacitively coupled plasma generators may beutilized for each separate precursor and the flow of excited species ofeach precursor can be independently controlled through gate valves orbased on plasma operation.

In operation, a wafer 30 is loaded on susceptor 28 and a first precursoris activated or excited within one of the first or second excitedspecies generation zones before passing through the necessary gatevalves and into the reaction chamber through showerhead 26. At the sametime, the second precursor may be retained within the other of theexcited species generation zones until the gate valves are opened topermit passage there through. Next, the first precursor flow is stoppedwith gate valves and the second excited precursor or an inert gas may beprovided to the reaction chamber. Since multiple implementations of aplasma generator are shown and described, a single CCP or ICP may beoperated continuously to maintain an excited species in both excitedspecies generation zones or separate CCPs and ICPs may be utilized andtriggered just before the excited species is needed in the reactionchamber. In this manner, the inlet manifold and reaction chamber canselectively receive excited species of any number of precursors withoutthe precursors coming in contact with each other during processing. Thusit is seen that incompatible excited precursors may be utilized toprocess a wafer or to etch a reaction chamber by selectively flowingexcited species activated in separate plasma generating zones.

These and other embodiments for methods and apparatus for a reactionchamber with dual plasma generation regions therein may incorporateconcepts, embodiments, and configurations as described with respect toembodiments of apparatus for measuring devices described above. Theparticular implementations shown and described are illustrative of theinvention and its best mode and are not intended to otherwise limit thescope of the aspects and implementations in any way. Indeed, for thesake of brevity, conventional manufacturing, connection, preparation,and other functional aspects of the system may not be described indetail. Furthermore, any connecting lines shown in the various figuresare intended to represent exemplary functional relationships and/orphysical couplings between the various elements. Many alternative oradditional functional relationship or physical connections may bepresent in the practical system, and/or may be absent in someembodiments. Further, various aspects and implementations of otherdesigns may be incorporated within the scope of the disclosure.

As used herein, the terms “comprises”, “comprising”, or any variationthereof, are intended to reference a non-exclusive inclusion, such thata process, method, article, composition or apparatus that comprises alist of elements does not include only those elements recited, but mayalso include other elements not expressly listed or inherent to suchprocess, method, article, composition or apparatus. Other combinationsand/or modifications of the above-described structures, arrangements,applications, proportions, elements, materials or components used in thepractice of the present invention, in addition to those not specificallyrecited, may be varied or otherwise particularly adapted to specificenvironments, manufacturing specifications, design parameters or otheroperating requirements without departing from the general principles ofthe same.

What is claimed is:
 1. A processing chamber comprising: a reactionchamber having a processing area; a processing gas inlet incommunication with the processing area; a faraday shield; a firstexcited species generation zone in communication with the processing gasinlet; and a second exited species generation zone in communication withthe processing gas inlet, wherein the first excited species generationzone and the second exited species generation zone are within thefaraday shield.
 2. The processing chamber of claim 1, wherein a reactionchamber is selectively exposed to first excited species from the firstexcited species generation zone and second excited species from thesecond exited species generation zone.
 3. The processing chamber ofclaim 1, wherein a valve is positioned between the first excited speciesgeneration zone and the processing gas inlet
 4. The processing chamberof claim 1, wherein a valve is positioned between the second excitedspecies generation zone and the processing gas inlet.
 5. The processingchamber of claim 1, wherein the first and second excited speciesgeneration zones are co-axially aligned.
 6. The processing chamber ofclaim 1 wherein the first excited species generation zone comprises aninductively coupled plasma generator.
 7. The processing chamber of claim1, wherein the second excited species generation zone comprises aninductively coupled plasma generator.
 8. The processing chamber of claim1, wherein the first excited species generation zone comprises acapacitively coupled plasma generator.
 9. The processing chamber ofclaim 1, wherein the second excited species generation zone comprises acapacitively coupled plasma generator.
 10. The processing chamber ofclaim 1, further comprising an inert gas flow positioned between thefirst and second excited species generation zones.
 11. The processingchamber of claim 1, wherein the first and second excited speciesgeneration zones are separated by inert gas valves.
 12. A processingchamber comprising: a reaction chamber having a processing area; aprocessing gas inlet in communication with the processing area; a firstexcited species generation zone in communication with the processing gasinlet; and a second exited species generation zone in communication withthe processing gas inlet, wherein a reaction chamber is selectivelyexposed to first excited species from the first excited speciesgeneration zone and second excited species from the second exitedspecies generation zone.
 13. The processing chamber of claim 12, whereinthe first excited species generation zone and the second exited speciesgeneration zone are within the faraday shield.
 14. The processingchamber of claim 12, wherein the first and second excited speciesgeneration zones are co-axially aligned.
 15. The processing chamber ofclaim 12, wherein the first and second excited species generation zonesare non-co-axial.
 16. The processing chamber of claim 12, wherein thefirst excited species generation zone comprises an inductively coupledplasma generator.
 17. The processing chamber of claim 12, wherein thefirst excited species generation zone comprises a capacitively coupledplasma generator.
 18. An apparatus for processing a substrate, theapparatus comprising: a first excited species generation zone incommunication with the processing gas inlet; and a second exited speciesgeneration zone in communication with the processing gas inlet, whereinfirst excited species from the first excited species generation zone andsecond excited species from the second exited species generation zoneare selectively introduced to an inlet of a reaction zone.
 19. Theapparatus of claim 18 wherein the first and second excited speciesgeneration zones are non-co-axial.
 20. The processing chamber of claim18 wherein the first and second excited species generation zones areco-axially aligned.